Temperature-Dependent Magnetoresistance of Single-Layer Graphene.

Autor: Vasileva, G. Yu., Alekseev, P. S., Vasil'ev, Yu. B., Dmitriev, A. P., Kachorovskii, V. Yu., Smirnov, D., Schmidt, H., Haug, R.
Předmět:
Zdroj: Journal of Experimental & Theoretical Physics; Sep2019, Vol. 129 Issue 3, p438-443, 6p
Abstrakt: The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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