| Autor: |
Song, Qingwen, Yuan, Hao, Sun, Qiujie, Han, Chao, Tang, Xiaoyan, Zhang, Yimeng, Yuan, Lei, Yang, Shuai, Zhang, Yuming |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Sep2019, Vol. 66 Issue 9, p3935-3939, 5p |
| Abstrakt: |
In this article, the breakdown voltage (${V}_{\text {BR}}$) shift of 4H-SiC Junction Barrier Schottky (JBS) diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse-bias stress (RBS) has been investigated, and the corresponding mechanisms are studied in-depth. It can be observed that ${V}_{\text {BR}}$ gradually increases with increasing stress time, but there is no obvious shift of the forward voltage (${V}_{F}$). The increment in the magnitude of ${V}_{\text {BR}}$ induced by RBS testing is shown to depend strongly on the degree of applied reverse-bias voltage. The physical mechanism of ${V}_{\text {BR}}$ shift has been investigated and explained by means of numerical technical computer-aided design (T-CAD) simulations. Our analysis shows that the hole injection and trapping into SiO2 at the FLR terminal area are identified to be the main cause, resulting in the increase of ${V}_{\text {BR}}$. Besides, a simple model is proposed to explain the behavior of ${V}_{\text {BR}}$ instability. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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