| Autor: |
Schifano, R., Jakiela, R., Galeckas, A., Kopalko, K., Herklotz, F., Johansen, K. M. H., Vines, L. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 9/28/2019, Vol. 126 Issue 12, pN.PAG-N.PAG, 17p, 6 Charts, 11 Graphs |
| Abstrakt: |
The impact of hydrogen in ZnO is revealed by combining reaction dynamics calculations with temperature dependent Hall (TDH), photoluminescence, and secondary ion mass spectrometry measurements performed on H, 2 H, and He implanted ZnO. H and 2 H box profiles with a concentration ranging from ∼ 3 × 10 17 cm − 3 to ∼ 10 19 cm − 3 and He to produce as much as damage as in the [H] ∼ 3 × 10 17 cm − 3 case were implanted in the samples. The formation of Li lean regions has been observed for [ 2 H] < 10 19 cm − 3 after annealing at 400 ° C. This is attributed to Li i presence consequent to the diffusion of Zn i created during the H/ 2 H implantation process. Results extracted from the TDH measurements performed prior to the annealing at 400 ° C evidence that Li i contributes to an increase in carrier concentration up to ∼ 10 17 cm − 3 by providing a donor level with an activation energy of ∼ 40 meV and thus is very close to the value of ∼ 47 meV expected for H in the oxygen site. The reaction dynamics analysis evidences that the amount of Li i introduced is decreasing at higher H implantation doses as a result of increasing V Zn and H-V Zn retrapping, reactions in which Li i is competing with H. Overall, due to Li i formation as well as the presence of Al the maximum percentage of the implanted H or 2 H acting as a donor in the investigated range is found to be ≲ 2%, which is considerably lower than previously reported. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
