| Autor: |
Yuan, Ruyue, You, Haifan, Cai, Qing, Dong, Kexiu, Tao, TaoTao, Liu, Bin, Chen, Dunjun, Zhang, Rong, Zheng, Youdou |
| Zdroj: |
IEEE Photonics Journal; Aug2019, Vol. 11 Issue 4, p1-7, 7p |
| Abstrakt: |
To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO2/SiNx 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 0 0 1) double-polished sapphire substrate. When depositing SiNx, we found that employing NH3 as nitrogen precursor instead of N2 can simultaneously improve the peak reflectivity of filter stopband in the designed visible-blind region and the transmissivity in the solar-blind region. Research shows that it is associated with the H atom concentration in SiNx and the generation of Si-O-N transition layer at SiO2/SiNx interface. Finally, we obtained a high-performance SiO2/SiNx PC UV filter with a stopband reflectivity over 90% from 285 to 345 nm and a transmissivity over 80% in the solar-blind region. The UV filter is also demonstrated to have a good effect in improving the solar-blind/visible-blind photocurrent response rejection ratio of a back-illuminated AlGaN photodetector by depositing it to the back of the detector. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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