Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate.

Autor:	Sushkov, A. A., Pavlov, D. A., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu., Baidus, N. V., Rykov, A. V., Kryukov, R. N.
Předmět:	AUDITING standards PHOTOLUMINESCENCE TRANSMISSION electron microscopy PHOTOLUMINESCENCE measurement BUFFER layers X-ray spectroscopy
Zdroj:	Semiconductors; Sep2019, Vol. 53 Issue 9, p1242-1245, 4p
Abstrakt:	A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1 02) substrate is formed and studied. The Ge buffer layer is produced by the "hot wire" technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al2O3 substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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