| Autor: |
Chandrasekar, Hareesh, Cheng, Junao, Wang, Tianshi, Xia, Zhanbo, Combs, Nicholas G., Freeze, Christopher R., Marshall, Patrick B., McGlone, Joe, Arehart, Aaron, Ringel, Steven, Janotti, Anderson, Stemmer, Susanne, Lu, Wu, Rajan, Siddharth |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 8/26/2019, Vol. 115 Issue 9, pN.PAG-N.PAG, 5p, 1 Chart, 5 Graphs |
| Abstrakt: |
BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120 meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8 × 107 cm/s reducing to 2 × 106 cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 1013 cm−2 to 2 × 1014 cm−2, respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
