| Autor: |
Qin, Yuan, Sun, Haiding, Long, Shibing, Tompa, Gary S., Salagaj, Tom, Dong, Hang, He, Qiming, Jian, Guangzhong, Liu, Qi, Lv, Hangbing, Liu, Ming |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Sep2019, Vol. 40 Issue 9, p1475-1478, 4p |
| Abstrakt: |
In this letter we present a high performance $\varepsilon $ -Ga2O3 solar-blind photodetector (SBPD) with asymmetric Schottky electrodes. The $\varepsilon $ -Ga2O3 films were heteroepitaxially grown on ${c}$ -plane sapphire by metal-organic chemical vapor deposition (MOCVD). The SBPDs were fabricated in the form of lateral interdigitated Schottky electrodes composed of a Pt/Ti/Au metal stack and a Ti/Au metal stack. The SBPD shows a rectification ratio of ~ 102 with low dark current of 25 pA at ${V} = {6}$ V. A high photo-to-dark-current ratio of ${5.7}\boldsymbol {\times }{10}^{{4}}$ under 254 nm light illumination was measured. Furthermore, the SBPD exhibits an ultrahigh detectivity and external quantum efficiency of ${4.2}\boldsymbol {\times }{10}^{{14}}$ Jones and ${4.1}\boldsymbol \,\,{\times }\,\,{10}^{{4}}$ %, respectively. Most importantly, the SBPD possesses an ultrahigh responsivity of 84 A/W with a fast response speed of 100 ms, suggesting the promise of $\varepsilon$ -Ga2O3 in the future photodetector applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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