| Autor: |
Cui, Yongjie, Zhang, Yuepeng, Witkowski, Larry, Yoon, Soack D., Pilla, Subrahmanyam, Beam, Edward, Xie, Andy, Chen, Shuoqi, Ketterson, Andrew, Lee, Cathy, Xie, Yunsong, Gao, Kaizhong, Hryn, John, Cao, Yu |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Aug2019, Vol. 40 Issue 8, p1249-1252, 4p |
| Abstrakt: |
We have designed and fabricated the first self-biased circulator operating in ${C}$ -band and monolithically integrated it with Qorvo’s GaN MMIC technology by embedding a FeNi-based magnetic nanowire composite (MNC) in a $100~\mu \text{m}$ thick SiC substrate. This integrated microstrip circulator shows a circulation frequency centered at 5.7 GHz, with an insertion loss of 2.7 dB and isolation of 14 dB. The circulator also demonstrated power handling of 9.6 W with continuous wave and at least 40 W under pulsed conditions. This letter points a path in integrating miniaturized circulators into full-duplex GaN T/R MMICs with stringent form factor limits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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