Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology.

Autor:	Boruzdina, A. B., Gerasimov, Yu. M., Grigor'ev, N. G., Kobylyatskii, A. V., Ulanova, A. V., Shvetsov-Shilovskii, I. I.
Předmět:	EXPOSURE dose RADIATION exposure LEAKAGE GAS leakage CONFORMANCE testing TECHNOLOGY RADIATION doses
Zdroj:	Russian Microelectronics; Jul2019, Vol. 48 Issue 4, p268-272, 5p
Abstrakt:	This article deals with a study of radiation-induced leakages between n-regions of various types using test structures fabricated according to the 0.18-µm CMOS technology. It is shown that, depending on the radiation exposure dose, the leakages between the n+-regions and the n-well may exceed the leakages between the n+-regions by 3–9 times, which should be taken into consideration when developing radiation resistant VSHICs. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink