| Autor: |
Gamkrelidze, S. A., Gnatyuk, D. L., Zuev, A. V., Maitama, M. V., Mal'tsev, P. P., Mikhalev, A. O., Fedorov, Yu. V. |
| Předmět: |
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| Zdroj: |
Russian Microelectronics; Jul2019, Vol. 48 Issue 4, p262-267, 6p |
| Abstrakt: |
This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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