| Autor: |
Yan, C., Ning, Y., Qin, L., Liu, Y., Zhao, L., Wang, Q., Jin, Z., Sun, Y., Tao, G., Chu, G., Wang, C., Wang, L., Jiang, H. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 7/8/2004, Vol. 40 Issue 14, p872-874, 3p |
| Abstrakt: |
Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 µm diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20°. Reliability test shows at 70°C an output power 0.35 W over 500 h. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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