| Autor: |
Yuan, Weijian, Liu, Xianzhe, Fang, Zhiqiang, Ning, Honglong, Zhang, Xu, Deng, Yuxi, Deng, Peimiao, Liang, Zhihao, Yao, Rihui, Peng, Junbiao |
| Předmět: |
|
| Zdroj: |
Molecular Crystals & Liquid Crystals; 2018, Vol. 676 Issue 1, p44-49, 6p |
| Abstrakt: |
In this work, SnO2 thin film was obtained with different annealing temperature by solution process. The result showed that transmittance in visible light region is related to the surface roughness, crystallinity, precursor impurity amount, and the presence of cracks and blisters. Annealing deposited films at a temperature below 300 °C, as temperature increases, remaining organic component decreases and transmittance increases while phase composition staying unchanged and without cracks and blisters. The substrate temperature has a positive effect on the sheet resistance of SnO2 thin film below 500 °C. SnO2 thin film with sheet resistance of 12.5kΩ and average transmittance in visible light region of 97% was acquired at 300 °C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
