| Autor: |
Kozlovski&icaron;, V.V., Ivanov, P.A., Rumyantsev, D.S., Lomasov, V.N., Samsonova, T.P. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jul2004, Vol. 38 Issue 7, p745-750, 6p |
| Abstrakt: |
It is shown that irradiation of Ni–SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni–SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal–semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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