| Autor: |
Alexana Roshko, Matthew Brubaker, Paul Blanchard, Todd Harvey, Kris Bertness |
| Zdroj: |
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p |
| Abstrakt: |
The microstructure, polarity and Si distribution in AlN/GaN layers grown by plasma assisted molecular beam epitaxy on Si(111) was assessed by scanning transmission electron microscopy. Samples grown under both metal- and nitrogen-rich conditions contained defects at the AlN/Si interface which suggest formation of an Al-Si eutectic. Correlated with this, interfacial segregation of Si was found in the samples. It is proposed that Si is dissolved in a eutectic layer floating on the AlN surface under metal-rich conditions. This Si is then incorporated into the film if the growth becomes nitrogen-rich, either intentionally or due to plasma source transients. These Si-rich layers appear to induce inversion of the nitride from nitrogen- to metal-polarity, and uncontrolled variations in the Si concentration cause occasional nonuniformity in the resulting inversion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
