| Autor: |
Alan G. Jacobs, Boris N. Feigelson, Jennifer K. Hite, Cameron A. Gorsak, Lunet E. Luna, Travis J. Anderson, Francis J. Kub |
| Zdroj: |
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p |
| Abstrakt: |
Here we present a direct comparison between the activation of implanted Mg ions in N–polar and Ga–polar substrates to produce p-type GaN via symmetric multicycle rapid thermal annealing (SMRTA). Physical dopant activation was achieved by annealing in moderate nitrogen pressures (3.3 MPa) in conjunction with a bi-layer cap. Photoluminescence shows activation was more readily achieved for N–polar films with measured UV luminescence up to ∼15× as intense as yellow/green luminescence compared to ∼2.4× for Ga–polar films. The greater activation of N–polar material was primarily due to a higher thermal stability compared to Ga–polar films. This demonstration of implanted Mg activation by SMRTA enables a facile route toward next generation vertical devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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