| Autor: |
Rudenko, M. V., Kholov, P. A., Gaponenko, N. V., Mukhin, N. V., Ivanov, V. A., Stas'kov, N. I. |
| Předmět: |
|
| Zdroj: |
International Journal of Nanoscience; Jun-Aug2019, Vol. 18 Issue 3/4, pN.PAG-N.PAG, 4p |
| Abstrakt: |
SrTiO3 and SrTiO3:Nd films of 110 nm and 210 nm thickness were fabricated using the sol–gel technology on silicon. Their current–voltage characteristics were investigated with and without illumination. The film structures are photosensitive and exhibit the hysteresis on the forward and reverse bias with loop broadening at the reverse part. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
