| Autor: |
Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskokovic, D., Yatcyk, B. M. |
| Předmět: |
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| Zdroj: |
Journal of Physical Studies; 2019, Vol. 23 Issue 2, p1-7, 7p |
| Abstrakt: |
The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as s1.1p1.5. The theoretical and experimental results are in satisfactory agreement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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