| Autor: |
Endruschat, Achim, Novak, Christian, Gerstner, Holger, Heckel, Thomas, Joffe, Christopher, Marz, Martin |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Power Electronics; Sep2019, Vol. 34 Issue 9, p9131-9145, 15p |
| Abstrakt: |
This paper presents a universal SPICE model for field-effect transistors, which is independent from technology and semiconductor material. The created behavioral simulation model is based on a set of collected measurement data. The temperature-dependent output characteristics are modeled using a hybrid approach consisting of lookup tables and analytical equations. This leads to fast simulation times and very high accuracy. The validity for the static temperature-dependent behavior of this approach is verified for one SiC and one GaN transistor using the respective datasheet curves. The transistors nonlinear capacitances are modeled in dependence of their inter-electrode voltages. In order to verify the validity in the dynamic range, the universal model is applied to a GaN high-electron-mobility transistor. Double pulse measurements are used for the dynamic validation at a characterized measurement test bench regarding its parasitic elements. Therewith a proper validation of the simulation model at switching transients as low as 5 ns is achieved. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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