| Autor: |
Zeng, Chun-hong, Lin, Wen-kui, Sun, Yu-hua, Cui, Qi, Zhang, Xuan, Li, Shao-juan, Zhang, Bao-shun, Kong, Mei |
| Zdroj: |
Optoelectronics Letters; May2019, Vol. 15 Issue 3, p170-173, 4p |
| Abstrakt: |
An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208–356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016–1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μ m is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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