| Autor: |
de Araujo, C. I. L., Gomes, J. C. S., Toscano, D., Paixão, E. L. M., Coura, P. Z., Sato, F., Massote, D. V. P., Leonel, S. A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/27/2019, Vol. 114 Issue 21, pN.PAG-N.PAG, 5p, 2 Diagrams, 3 Graphs |
| Abstrakt: |
In this work, we perform investigations of the competition between domain-wall pinning and attraction by antinotches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allows the proposition of a three-terminal device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between antinotches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurements. Thus, our proposed device is a promising magnetoresistive random access memory device with good scalability, duration, and high speed information storage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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