| Autor: |
Kushwaha, Pragya, Agarwal, Harshit, Lin, Yen-Kai, Dasgupta, Avirup, Kao, Ming-Yen, Lu, Ye, Yue, Yun, Chen, Xiaonan, Wang, Joseph, Sy, Wing, Yang, Frank, Chidambaram, PR. Chidi, Salahuddin, Sayeef, Hu, Chenming |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jun2019, Vol. 40 Issue 6, p985-988, 4p |
| Abstrakt: |
1/ ${f}$ noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/ ${f}$ noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for n- and p-channel FinFETs, we have improved the BSIM-CMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/ ${f}$ noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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