| Autor: |
Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jun2019, Vol. 40 Issue 6, p881-884, 4p |
| Abstrakt: |
Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate. Crucial to the process is a ~30 nm thick SiN interlayer that has been optimized for thermal resistance. The reductions obtained in self-heating have been quantified by transient thermoreflectance imaging and interpreted using 3D numerical simulation. With a DC power dissipation level of 56 W/mm, the measured average and maximum temperatures in the gate-drain access region were 176 °C and 205 °C, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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