| Autor: |
Nag, Manoj, Celiker, Hikmet, Verschueren, Lynn, Smout, Steve, Willegems, Myriam, Upadhyay, Rishabh, Rolin, Cédric, Papadopoulos, Nikolaos, Genoe, Jan, Dehaene, Wim, Steudel, Soeren, Heremans, Paul, Myny, Kris |
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| Zdroj: |
SID Symposium Digest of Technical Papers; Jun2019, Vol. 50 Issue 1, p1255-1258, 4p |
| Abstrakt: |
We present dual‐gate (DG) dual‐layer (a‐ITZO and a‐IGZO) amorphous oxide TFTs integrated on polyimide (PI) foil. The fabricated TFTs show an apparent dual‐gate field‐effect mobility (µFE) of 45.0 cm2/ (V.s), sub‐threshold slope (SS−1) of 0.40 V/decade and ION/IOFF ratio of >108. The DG dual‐layer TFT based ring‐oscillators exhibit faster oscillation frequencies (fosc) compared to DG a‐IGZO TFT based ring‐oscillators. These TFTs are paving the way to faster scan drivers and higher resolution displays. It is also verified that with DG dual‐layer TFTs, the current variation can be reduced when applying an off‐panel compensation method to the asymmetric channel. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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