| Autor: |
Gusev, A. S., Kargin, N. I., Ryndya, S. M., Safaraliev, G. K., Siglovaya, N. V., Sultanov, A. O., Timofeev, A. A. |
| Zdroj: |
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Mar2019, Vol. 13 Issue 2, p280-284, 5p |
| Abstrakt: |
Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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