Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation.

Autor:	de Carvalho, Rafaela C., Betts, Anthony J., Cassidy, John F.
Předmět:	MEMRISTORS CHEMISTRY PLATING SEMICONDUCTOR materials POINT defects N-type semiconductors
Zdroj:	Journal of Solid State Electrochemistry; Jun2019, Vol. 23 Issue 6, p1939-1943, 5p
Abstrakt:	A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. This device also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink