| Autor: |
Pačebutas, V., Stanionytė, S., Norkus, R., Bičiūnas, A., Urbanowicz, A., Krotkus, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2019, Vol. 125 Issue 17, pN.PAG-N.PAG, 5p, 6 Graphs |
| Abstrakt: |
Quaternary GaInAsBi alloy epitaxial layers were grown on InP substrates with 6% Bi. It was found that the thick layers remain fully strained. The measured carrier lifetimes were of the order of a few picoseconds. The terahertz (THz) emission was investigated using a GaInAsBi layer as an unbiased surface emitter and as a substrate for photoconductive antenna. It was observed that fabricated THz emitters were sensitive to the optical pulses with wavelengths longer than 2 μm. The demonstrated spectral characteristics of THz pulses obtained when using an Er-doped fiber laser for photoexcitation were comparable with those observed in other emitters used for THz-time-domain spectroscopy systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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