| Abstrakt: |
Methods of measuring the density, microhardness, temperature dependence of conductivity, X‑ray analysis, and optical microscopy of the quenched samples are used to explore the kinetics and the mechanism of transformations during the bulk isothermal crystallization of AsSe1.5Рbx semiconducting glasses (х = 0, 0.025, 0.13) in the temperature range 210–340°С. The kinetics of the total bulk crystallization of glasses is analyzed according to the data of density measurements using the Kolmogorov–Avrami equation generalized for the stepwise and incomplete isothermal transformations. [ABSTRACT FROM AUTHOR] |
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