| Autor: |
Lee, S.C., Brueck, S.R.J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/2004, Vol. 96 Issue 2, p1214-1218, 5p, 5 Black and White Photographs, 2 Diagrams |
| Abstrakt: |
The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO2-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO2 mask undergoes faceting, resulting in a pyramidal shape with {110} sidewalls. Growth is slowed or terminated with the generation of these {110} facets even with a continuing supply of Ga atoms. This implies that the pyramidal shape is energetically very stable. Based on experimental results and the Wulff construction, a {ll0}-type sidewall pyramid is proposed as an ECS of GaAs on (001) in nanoscale patterned growth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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