| Autor: |
Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W., Marshall, A. R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/15/2019, Vol. 114 Issue 15, pN.PAG-N.PAG, 5p, 1 Chart, 6 Graphs |
| Abstrakt: |
We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W − 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was <44 nm and the quality factor ∼80. The peak quantum efficiency was >60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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