Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer.
| Autor: | V V Voronenkov, A A Leonidov, N I Bochkareva, R I Gorbunov, P E Latyshev, Y S Lelikov, V S Kogotkov, A S Zubrilov, Y G Shreter |
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| Zdroj: | Journal of Physics: Conference Series; 2019, Vol. 1199 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
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