Rationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below.
| Autor: | A V Fomina, V V Frantsuzova, Ya I Petrenko, D V Kornachev, A R Avanesyan |
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| Zdroj: | IOP Conference Series: Materials Science & Engineering; Apr2019, Vol. 498 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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