| Autor: |
Dev, Sukrith, Wang, Yinan, Kim, Kyounghwan, Zamiri, Marziyeh, Kadlec, Clark, Goldflam, Michael, Hawkins, Samuel, Shaner, Eric, Kim, Jin, Krishna, Sanjay, Allen, Monica, Allen, Jeffery, Tutuc, Emanuel, Wasserman, Daniel |
| Zdroj: |
Nature Communications; 4/9/2019, Vol. 10 Issue 1, pN.PAG-N.PAG, 1p |
| Abstrakt: |
The measurement of minority carrier lifetimes is vital to determining the material quality and operational bandwidth of a broad range of optoelectronic devices. Typically, these measurements are made by recording the temporal decay of a carrier-concentration-dependent material property following pulsed optical excitation. Such approaches require some combination of efficient emission from the material under test, specialized collection optics, large sample areas, spatially uniform excitation, and/or the fabrication of ohmic contacts, depending on the technique used. In contrast, here we introduce a technique that provides electrical readout of minority carrier lifetimes using a passive microwave resonator circuit. We demonstrate >105 improvement in sensitivity, compared with traditional photoemission decay experiments and the ability to measure carrier dynamics in micron-scale volumes, much smaller than is possible with other techniques. The approach presented is applicable to a wide range of 2D, micro-, or nano-scaled materials, as well as weak emitters or non-radiative materials. A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pixel. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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