| Autor: |
Li, Mo, Lyu, Yanqiu, He, Yingjie, Zhu, Xubo, Cao, Xiancun |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; May2019, Vol. 48 Issue 5, p2986-2991, 6p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
This paper reports the growth and characterization of InAlSb photodiodes grown on a InSb substrate for high operation temperature application. The studied InAlSb structures cover a cutoff wavelength range from 4.4 μm to 4.8 μm by tuning the Al composition in the absorber layers. A high Al composition barrier layer was inserted between the P-type contact layer and the absorber layer to reduce leakage current from the contact layer. To study the potential for high operation temperature device application, we here consider a 4.5 μm cutoff InAlSb p–i–n photodetector as an example. The detector exhibited a differential resistance at zero bias R0A in excess of 3.8 × 104 Ωcm2 and a quantum efficiency of 57% at 110 K, providing a specific detectivity of more than 1.5 × 1011 cmHz1/2/W and a background limited operating temperature of 130 K with a 300 K background. The dominant mechanism of dark current and its relationship with operating temperature were analyzed in detail. InAlSb detectors are potentially low-cost, have high operating temperature, low dark current and a high quantum efficiency, which can meet the demands of high performance infrared detectors for small platforms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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