Determination of Diffusion Coefficient of Copper in ZnO (001) Single Crystals at 1000 °C.

Autor: López-Salazar, Primavera, Juárez-Díaz, Gabriel, Martínez-Juárez, Javier, Luna-López, José A., Peña Sierra, Ramón, Koudriavtsev, Yuri, Palomino-Jiménez, Carlos, Rodríguez-Victoria, Angel. P.
Předmět:
Zdroj: Crystals (2073-4352); Mar2019, Vol. 9 Issue 3, p131-131, 1p
Abstrakt: Copper from a solid source was diffused into undoped n-type bulk ZnO (001) single crystals at 1000 °C under a nitrogen atmosphere at different diffusion times. The Cu diffusion profiles were obtained by Secondary ion mass spectroscopy (SIMS), and the fitting reveals a diffusion case from a constant concentration source. A value for the diffusion coefficient of 2.42(±0.2) × 10−12 cm2∙s−1 was obtained. Electrical measurements present an increment of carrier concentration with diffusion time, but remains n-type which indicates an increase in the donor levels produced by structural defects in ZnO. Photoluminescence (PL) spectra showed an increment of green emission intensity associated with Cu incorporation. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index