| Autor: |
Tsusaka, Y., Mizuochi, H., Imanishi, M., Imade, M., Mori, Y., Matsui, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2019, Vol. 125 Issue 12, pN.PAG-N.PAG, 7p, 7 Diagrams, 1 Chart |
| Abstrakt: |
Basal-plane and threading dislocations in multipoint-seed Na-flux-grown GaN single crystals are characterized in terms of Burgers vectors mainly by using bright-field X-ray topography under multiple-diffraction conditions. The technique, combined with a CMOS camera system with high spatial resolution, can provide topographic images of the dislocations with a relatively high dislocation density (up to approximately 5 × 10 5 c m − 2 ). It is possible to directly determine the Burgers vector of individual dislocations based on invisibility criteria. From the present experiment, it is found that almost all basal-plane dislocations have a-type Burgers vectors, and threading dislocations have a- and (a + c)-type Burgers vectors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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