Quasi-3D TCAD modeling of STI radiation-induced leakage currents in SOI MOSFET structure.
| Autor: | K. O. Petrosyants, D. A. Popov, D. V. Bykov |
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| Zdroj: | Journal of Physics: Conference Series; 2019, Vol. 1163 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
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