Autor: |
Ohsawa, Jun, Yoshinobu Nekado, Norihiro Katayama, Tasuhiro Saito, Masatoshi Migitaka, Nuio Tsuchida |
Předmět: |
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Zdroj: |
Electronics & Communications in Japan, Part 2: Electronics; Dec97, Vol. 80 Issue 12, p1-6, 6p |
Abstrakt: |
Memory capacitors of gallium arsenide pnp structure have been fabricated by use of iron diffusion through n/n+/n epitaxial layers. The deep acceptor level of iron was successfully utilized to selectively compensate the lightly doped n-type outer layers. The pnp structure exhibits leakage current comparable to that of a low-leakage GaAs diode. The surface conductance decreases below one tenth after the pnp capacitor is biased at 3 V, which is due to depletion of carriers in the p-type layers. The charge storage time measured by the conductance change was 83 s. Recovery of the conductance by illumination has also been confirmed. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(12): 1–6, 1997 [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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