| Autor: |
Cho, M.-H., Moon, D.W., Park, S.A., Kim, Y.K., Jeong, K., Kang, S.K., Ko, D.-H., Doh, S.J., Lee, J.H., Lee, N.I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/21/2004, Vol. 84 Issue 25, p5243-5245, 3p, 4 Graphs |
| Abstrakt: |
The characteristics of N-incorporated HfO2–Al2O3 alloy films (HfAlO) were investigated by high-resolution x-ray photoelectron spectroscopy (XPS), near-edge x-ray absorption fine structure (NEXAFS), medium-energy ion scattering (MEIS), and capacitance–voltage measurements. The core-level energy states, Hf 4f and Al 2p peaks of a 15 Å thick film showed a shift to lower binding energy, resulting from the incorporation of nitrogen into the films. Absorption spectra of the O K edge of HfAlO were affected mainly by the Al2O3 in the film, and not by HfO2 after nitridation by NH3 annealing. The NEXAFS of N K edge and XPS data related to the chemical state suggested that the incorporated N atom is dominantly bonded to Al2O3, and not to HfO2. Moreover, MEIS results implied that there is a significant incorporation of N at the interface between the alloy film and Si. The incorporation of N effectively suppressed the leakage current without an increase in interfacial layer thickness, while the interfacial state of the N-incorporated films increased somewhat. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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