| Autor: |
Bagamadova, A. M., Asvarov, A. Sh., Omaev, A. K., Zobov, M. E. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Dec2018, Vol. 44 Issue 12, p1142-1144, 3p |
| Abstrakt: |
High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al2O3 heterostructure have been analyzed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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