| Autor: |
Zheng, J., Tan, Y., Yuan, Y., Ghosh, A. W., Campbell, J. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2019, Vol. 125 Issue 8, pN.PAG-N.PAG, 7p, 1 Color Photograph, 3 Charts, 6 Graphs |
| Abstrakt: |
Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used to make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on the band structure of the InAlAs digital alloy. Simulation using a tight binding model that includes the strain effect yields bandgap energies that are consistent with experimental results. The bandgap would be larger without strain. In addition, a positive relationship has been found between minigaps of the InAlAs digital alloy and the band offset between bulk InAs and AlAs at the same position in k-space. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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