| Autor: |
Sakurai, Makoto, Liu, Kewei, Aono, Masakazu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2019, Vol. 125 Issue 8, pN.PAG-N.PAG, 7p, 1 Black and White Photograph, 2 Diagrams, 6 Graphs |
| Abstrakt: |
We report a reversible transition between semiconducting and insulating states in a single-crystal SnO2 microrod device through creation and healing of lattice defects by applying mechanical stress and voltage. The process of creating lattice defects by using mechanical stress is investigated using transmission electron microscope and photoluminescence observations. The results reveal the presence of slip planes and non-volatile lattice defects. The healing process is analyzed through the dynamic response of the current to the pulse voltage applied to the ends of the microrod. It is found that there are fast and slow healing processes. The fast process is due to field-induced reduction of the trapping potential barrier, and the slow one is due to Joule heating. The reversible and nonlinear nature of the defect manipulation will open new avenues of innovation different from those of conventional technology, especially for the mechanical design of touch interfaces. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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