| Autor: |
B Schoenaers, A Stesmans, V V Afanas’ev |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Mar2019, Vol. 34 Issue 3, p1-1, 1p |
| Abstrakt: |
Electron spin resonance (ESR) results are presented on the thermal stability and temperature dependence of the ESR spectral characteristics of the As acceptor dopant (As substituting for S site) in geological 2H-MoS2. Under sequential isochronal heating in H2 (1.1 atm), the As dopant density is found to remain unaffected for anneal temperatures (Tans) up to 525 °C, above which the density moderately decreases (∼3 times) for Tan → 840 °C. In turn, vacuum annealing is seen to result in a gradual increase (2–3 times) of the As acceptor density for Tan increasing from 400 °C → 840 °C, pointing to a positive ‘regain’ of misconfigured As impurities in pristine geo-MoS2. Finally, meticulous monitoring of the ESR signal intensity versus tempertaure at X-band confirms the previously inferred As acceptor activation energy of 0.7 ± 0.2 meV at K-band. The appropriateness of the latter ESR probing and analysis approach has been consolidated by application to the archetypal case of decoupled P donors in n-Si, resulting in an ESR-determined activation energy (42 ± 4 meV) well in agreement with the generally accepted one. In light of these findings, As is confirmed as a promising candidate for stable covalently bonded p-type doping of MoS2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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