V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers.

Autor: Kolanowski, C., Allam, R., De Jaeger, J. C., Bourne-Yaonaba, P., Dourlens, C., Favre, J.
Předmět:
Zdroj: Microwave & Optical Technology Letters; 6/20/97, Vol. 15 Issue 3, p139-144, 6p, 2 Black and White Photographs, 1 Diagram, 1 Chart, 7 Graphs
Abstrakt: MMIC microstrip single-gate cold mixers and dual-gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25-μm-gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characterizations, specific nonlinear modeling and reverse engineering. A comparison for each MMIC is described from the chip process, from the same technology, under the same specifications. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 139–144, 1997. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index