Edge-emitting Si Avalanche Mode LED integrated into a SiGe RF bipolar technology: Optical power emission characterization with optical probe mapping technique.

Autor: Ogudo, Kingsley A., Polleux, Jean-Luc, Snyman, Lukas W.
Zdroj: Proceedings of SPIE; 4/16/2019, Vol. 11043, p1-16, 16p
Databáze: Complementary Index