| Autor: |
Ma, Lulu, Xing, Huadan, Ding, Qi, Han, Yuetao, Li, Qiu, Qiu, Wei |
| Předmět: |
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| Zdroj: |
AIP Advances; Jan2019, Vol. 9 Issue 1, pN.PAG-N.PAG, 5p |
| Abstrakt: |
Nano-indentation is a destructive measurement that introduces non-uniform residual stress around each nano-indentation. Herein, the residual stress distribution around a Berkovich nano-indentation on (001)- and (111)-plane silicon was studied by micro-Raman mapping. All of the in-plane stress state components around the indentation were obtained specifically for the (001)- and (111)-plane silicon based on the expanding cavity model and the Raman-mechanical relationship. Calculating the distribution regularity of the residual stress, the effect of different crystal planes and crystal orientations was further analyzed. Finally, the stress near the vertex of the indentation was revised owing to the crack. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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