| Autor: |
Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Masaru Hori |
| Zdroj: |
Japanese Journal of Applied Physics; Feb2019, Vol. 58 Issue SA, p1-1, 1p |
| Abstrakt: |
Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl2-mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N2-H2 inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl2-added Ar sputtering at a low growth temperature of 670 °C, whilst the growth mode coalesced at temperatures lower than 600 °C. With more than 2.0% of Cl2, no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 °C. At the growth temperature of 670 °C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl2 and 27.4% N2, even though the background pressure was 10−4 Pa. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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