| Autor: |
van den Heuvel, M. G. L., Hueting, R. J. E., Hijzen, E. A., in't Zandt, M. A. A. |
| Předmět: |
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| Zdroj: |
IEE Proceedings -- Circuits, Devices & Systems; Jun2004, Vol. 151 Issue 3, p225-230, 6p |
| Abstrakt: |
Examines the trench sidewall effective electron mobility values by using the split capacitance voltage method for a large range of the transversal effective field. Analysis of the influence of crystal orientation, doping concentration and temperature; Importance of the results for the optimization of trench power devices; Explanation for mobility behavior. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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