| Autor: |
Lisiansky, Michael, Popov, Inna, Uvarov, Vladimir, Korchnoy, Valentina, Meyler, Boris, Yofis, Svetlana, Shneider, Yacov |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2019, Vol. 37 Issue 1, pN.PAG-N.PAG, 8p |
| Abstrakt: |
A metal–insulator–metal (MIM) capacitor was developed herein with an atomic layer deposition-fabricated hafnia aluminate (HfAlOx) dielectric layer. A preparation flow combining pre- and post-deposition treatment yielded a device with increased capacitance density and excellent dielectric integrity that can be employed in front-end and back-end of line implementations. With an equivalent oxide thickness scalable to 2 nm and beyond, the MIM capacitor can be implemented in either RF or analog/mixed applications with a functional voltage up to 3.3 V as a decoupling element, or for memory, bypass and coupling needs. Reduction of the equivalent oxide thickness was achieved by engineering the phase composition of the dielectric layer. A k-value of ∼30 was obtained via intentional crystallization of HfAlOx into a high-symmetry phase. The role of the bottom electrode (TiN) predeposition treatment in the dielectric layer crystallization process and, consequently, in the electrical performance of the MIM capacitor is emphasized. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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