| Autor: |
Ismail, Muhammad, Nisa, Shafqat-Un, Rana, Anwar Manzoor, Akbar, Tahira, Lee, Jinju, Kim, Sungjun |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/1/2019, Vol. 114 Issue 1, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
By introducing a thin non-stoichiometric CeO2-x switching layer between the high oxygen affinity metal TaN top electrode and the TiO2 layer in a TaN/CeO2-x/TiO2/Pt bilayer (BL) device, it is possible to enhance the endurance characteristics and overcome the reliability issue. Compared with a single layer device, a BL device significantly enhances the number of direct current overswitching cycles to >1.2 × 104, non-destructive retention (>104 s), and switching uniformity. A TaON interface layer is formed which served as a reservoir of oxygen ions (O2−) in the SET-process and acts as an O2− supplier to refill the oxygen vacancies in the RESET-process and so plays a key role in the formation and rupture of conductive filaments. This study demonstrates that simply introducing a thin non-stoichiometric CeO2-x switching layer into TiO2-based devices can facilitate the enhancement of the endurance property for future nonvolatile memory applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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