Autor: |
Daichi Koretomo, Yuta Hashimoto, Shuhei Hamada, Miki Miyanaga, Mamoru Furuta |
Zdroj: |
Japanese Journal of Applied Physics; Jan2019, Vol. 58 Issue 1, p1-1, 1p |
Abstrakt: |
The influence of a SiO2 passivation layer on the electrical properties and reliability of an In–W–Zn–O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures (Ta). Although the TFT without passivation showed good transfer characteristics when the Ta is 150 °C, it has huge hysteresis and poor reliability. Furthermore, the TFTs without passivation changed from transistor to conductor when the Ta is 200 °C or higher. In contrast, the TFTs with passivation exhibited switching property even at Ta of 350 °C. Positive bias temperature stress reliability of the TFTs significantly improved by applying the Ta with passivation. Thus, a passivation layer is essential to increase the Ta, resulting in the improvement of electrical properties and reliability of the IWZO TFTs. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
|